Effect of barrier thickness on photoelectric properties of InGaN/GaN asymmetric multiple-quantum-well structure light-emitting diode

GaN/GaInN asymmetric multiple quantum well light-emitting diodes with varying potential barrier thicknesses (5 and 15 nm) are grown by using metal organic chemical vapor deposition. The narrow structure improves the performance of device, including super-linear increase electroluminescence integral intensity, mitigation efficiency droop at high current density, reduction wavelength drift, forward voltage, improvement wall-plug efficiency. This is due to narrowing thickness barrier, which results in smaller electric field among well, weakening confinement Stark effect, more uniform distribution carriers across active region suppression electron leakage.